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We propose all-optical switching devices based on the cross-phase modulation in silicon waveguides for high-bit-rate signals over 40 Gb/s while suppressing the influence of free carriers.
We studied ultrafast optical dynamics in silicon wire waveguides operating at 1.55 mum by employing a heterodyne pump-probe method with 240-fs temporal resolution. From measurement results, nonlinear properties were determined.
We fabricated high-index-contrast II-VI-based multiple-quantum-well channel-waveguides buried in a SiO2 cladding-layer, for the application to intersubband transition all-optical-switches at communication wavelengths. We demonstrated the sub-picosecond switching of the waveguides using intersubband absorption saturation recovery.
Ultrafast cross-phase modulation in InGaAs/AlAsSb coupled double quantum wells, where interband dispersion is modulated by intersubband excitation, is applied to a MZI switch demonstrating error-free all-optical demultiplexing of 160-Gb/s OTDM signal to 40-Gb/s.
Ultrafast cross-phase modulation induced by intersubband excitation was ~2-3 times enhanced when tuning probe wavelength from 1640 to 1360 nm, showing a ~300 nm broadband. Interband dispersion model explains wavelength dependence.
All-optical switch based on the intersubband transition in InGaAs/AlAsSb quantum wells with DFB structure was fabricated using deep-etching technology. The sharp transmission spectrum with a difference of more than 13 dB between the stopband and the off-resonant regions was successfully obtained. Furthermore, the applicability of this device to ultrafast optical switches with a switching speed greater...
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