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CuO nanowires are synthesized by heating Cu foil, rod and grid in ambient without employing a catalyst or gas flow at temperatures ranging from 400 to 800°C for a duration of 1–12h. Scanning electron microscopy (SEM) investigation reveals the formation of nanowires. The structure, morphology and phase of the as-synthesized nanowires are analyzed by various techniques such as X-ray diffraction (XRD),...
Three-dimensional (3D) integrated circuits (ICs) offer considerable advantages over traditional 2D IC designs by offering increased signal speeds and lower operation power, and by combining multiple technology functions in a low-volume, stacked design. The design complexity of 3D ICs introduces an increased sensitivity of operation and reliability due to the thermomechanical interactions among their...
We have developed a complete process module for fabricating front end of line (FEOL) through silicon vias (TSVs). In this paper we describe the integration, which relies on using thermally deposited silicon as a sacrificial material to fill the TSV during FEOL processing, followed by its removal and replacement with tungsten after FEOL processing is complete. The uniqueness of this approach follows...
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