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In this paper, a novel process using two-step electron beam lithography and zigzag T-gate method is proposed to fabricate 35-nm T-gates and demonstrated by fabricating high performance Alo.25Gao.75As/ino.2Gao.8As/GaAspHEMTs . Two-step lithography adopting a low temperature development method reduces electron forward scattering and the detrimental effect of the head exposure on foot definition. Thus,...
A Ka-band monolithic microwave integrated circuit (MMIC) oscillator was implemented by using a coplanar waveguide photonic bandgap (PBG) resonator and a 0.1mum GaAs pseudomorphic high electron mobility transistor (p-HEMT). A coplanar labyrinthine one-dimensional PBG resonator was used for reduction in MMIC size. The fabricated MMIC oscillator had an output power of 6.5 dBm at 30.3 GHz and a free-running...
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