In this paper, a novel process using two-step electron beam lithography and zigzag T-gate method is proposed to fabricate 35-nm T-gates and demonstrated by fabricating high performance Alo.25Gao.75As/ino.2Gao.8As/GaAspHEMTs . Two-step lithography adopting a low temperature development method reduces electron forward scattering and the detrimental effect of the head exposure on foot definition. Thus, this method enables 35-nm T-gate patterning using a tri-layer (PMMA-MAA/PIVIGI/PIV1MA) resist structure under a low 20 keV electron beam acceleration condition. The zigzag style T-gate enhances mechanical support for the 35-nm T-gate to remain standing after metal lift-off process. It is shown here that 35-nm zigzag T-gate Alo.25Gao.75As/ino.2Gao.8As/GaAspHEMTs with fr of 200 GHz can be realized using this process.