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In this paper, we present a state-of-the-art integrated GaN power IC capable of operating in a high frequency (MHz) regime. This realizes system size reduction, 60% maximum, of a power IC. The IC consists of two output power transistors (PT) and two gate drivers (GD). The key devices in the IC are normally-off gate injection transistors (GITs) for PT and GD and a normally-on hetero-junction field...
Recently, there have been remarkable advances in medical techniques for regenerating bone defects. To determine the degree of bone regeneration, it is essential to develop a new method that can analyze microstructure and related mechanical function. Here, quantitative analysis of the orientation distribution of biological apatite (BAp) crystallites by a microbeam X-ray diffractometer system is proposed...
We present a novel GaN-based diode with low reverse leakage current which ensures the high voltage operation up to 600V. The diode consists of multi-junctions of AlGaN/GaN with a p-GaN overlayer where the anode and cathode are formed on the sidewalls of the channels. The tunneling current which is the origin of the leakage current can be reduced by controlling the potential barrier at the anode sidewall...
To embedded ferroelectric random access memories in the 65-nm CMOS and beyond, three-dimensional structure and low-temperature formation have been developed.
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