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Aluminum nitride (AlN) Lamb wave resonators (LWRs) utilizing the lowest symmetric (S0) mode have attracted much interests since they have high frequencies, low motional impedances, and capability of multiple frequencies on a single chip. However, the transverse spurious modes are often strong in AlN LWR, and largely degrade the performance in application, so suppression the transverse mode is highly...
A composite plate composed of aluminum nitride (AlN) and cubic silicon carbide (3C-SiC) is a promising mechanical structure that enables high-frequency Lamb wave devices since the 3C-SiC plate can effectively increase coupling of high-order Lamb wave modes and reduce steep phase velocity dispersion simultaneously. In this study, two-port filters and resonators utilizing various Lamb wave modes in...
By adjusting the aluminum nitride (AlN) “overhang” dimension, OH, measured from the center of the outermost electrode to the edge of AlN plate, independently of the interdigital transducer (IDT) pitch, AlN Lamb wave mode resonators (LWRs) with 0.25% relative frequency control were demonstrated. Unlike adjusting electrode number, NE, device length, L, and electrode coverage, η, all of which affect...
This paper reports fine frequency selection techniques for aluminum nitride (AlN) Lamb wave mode resonators (LWR) to control the relative frequency of resonators in an array to 0.1%. The technique that works the best is by adjusting the so-called AlN “overhang” dimension, OH, measured from the center of the outermost electrode to the edge of AlN plate independently of the interdigital transducer (IDT)...
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