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Thermal compensation for aluminum nitride (AlN) Lamb wave resonators operating at high temperature is experimentally demonstrated in this study. By adding a compensating layer of silicon dioxide (SiO2), the turnover temperature can be designed for high temperature operation by varying the normalized AlN thickness (hAlN/λ) and the normalized SiO2 thickness (hSiO2/λ) in the AlN/SiO2 composite stack...
In this paper, aluminum nitride (AlN) Lamb wave resonators (LWR) operating in air from room temperature up to 600??C are demonstrated for the first time. To date, no AlN RF devices have been tested and characterized at extreme temperatures. This paper describes the design, fabrication and characterization of temperature compensated AlN Lamb wave resonators at 600??C. Temperature coefficients of frequency...
In this paper we present the temperature compensation of aluminum nitride (AlN) Lamb wave resonators for a future application to XOs and TCXOs for a frequency ranging from 100 MHz to 1000 MHz. The temperature coefficient of frequency (TCF) for the lowest symmetric Lamb wave mode S0 for AlN plates with h/lambda<0.3 is found to be around -30 ppm/K. A zero TCF resonator is obtained by adding a compensating...
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