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In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their...
We propose for the first time a systematic evaluation of the performance and underlying trade-off of the use of ternary Hf1−xAlxOy oxides for RRAM application. We show that intermixing HfO2 and Al2O3 deposition cycles in a standard ALD process not only prevents crystallization of active layer but also significantly improve intrinsic retention and disturb-immunity properties at the expense of a small...
We review our recent work on modeling of low current filamentary switching in amorphous HfO2 RRAM. The conduction is controlled by the width of the constriction, determining the electron transmission. The set and reset processes are modeled as a dynamic flow between two oxygen vacancy reservoirs connected by a narrow constriction. Reset is described as a dynamic balance between an upward and downward...
We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al2O3 layer in TiN\HfO2\Hf\TiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) ‘natural’ (asymmetry-induced) reset switching takes place...
Here for the first time we discuss RRAM cell performance and reliability through process improvement. Excellent post-cycling (106) retention and post-bake retention and endurance have been achieved for the optimized process conditions. The optimized RRAM cells show potential for manufacturability and scalability for high density memory application.
HfO2-based resistive RAM (RRAM) devices have received intensive research attention in the recent years. Most of the HfO2-based RRAM system demonstrates promising performance in bipolar mode. However, HfO2-based RRAM devices in unipolar mode so far, still suffers from low endurance (<;500 cycles), and non-integratable electrode materials such as Pt or Au. In this work, CMOS-compatible Ni-containing...
In this work, the effect of the anode electrode-HfO2 interface on unipolar switching for HfO2-based RRAM is systematically investigated. It is found that the switching behavior can be improved not only by changing the anode electrode material (TiN vs. Pt), but also by engineering the anodic interface with thin M or MOx capping layers between the electrode and the HfO2 film, such as Ti or TiO. The...
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