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In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution...
In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361µm in the diameter at the front side,...
Tapered TSV interconnection has begun used in CMOS Image Senor (CIS) and currently is penetrating its application in other areas, such as MEMS devices and Si Interposer. It helps relive the technical difficulties of conformal deposition of insulation layer and conducting layer and therefore it's helpful for yield improvement and cost reduction. Besides that, it helps also relieve the stress accumulation...
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