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In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution...
The fabrication of redistribution layer (RDL) for TSV 3D integration and its optimization are presented in this paper. BCB is selected as the passivation layer and the electroplated Cu is used as the metal layer. CYCLOTENE 3024–46 is utilized and it is deposited by spin-coating and soft cure at 210 °C in annealing oven for 40 minutes with N2 protection. Sputtered Ti/W/Cu and electron beam evaporated...
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