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Selenium- and sulfur-doped amorphous hydrogenated silicon films were prepared by the conventional plasma-enhanced chemical vapor deposition (PECVD) technique. Both Se- and S-doped films have band gaps that range from 1.7 to 2.0 eV, as a function of doping concentration. The photoresponse of the films was determined by illuminating with white light of 100 mW/cm 2 intensity. The intensity variation...