The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
As infrared focal plane arrays (FPAs) have evolved from the first generation of linear arrays to the second generation of small format staring arrays to the present "third-gen" devices, there is an increased emphasis on large area focal plane arrays with multicolor operation and higher operating temperature. In this paper, we will discuss how one needs to develop an increased functionality...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
Different metallisation schemes for the formation of n-type ohmic contact on type-II InAs/GaSb strained layer superlattice material are reported. The specific contact resistance of metal contacts was evaluated by the transfer length method. The Ge(282A)/Au(547A)/Ni (50A)/Pt(470A;)/Au(2001A) contact yielded a specific contact resistance of 1.6×10-5 Omegacm2 (rapid thermal anneal, 380 C, 60...
We report on type-II SLS's photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial- misfit-approach, which relieves the strain though 90 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.
We present a SLS-based nBn infrared detector which suppresses the surface leakage current without using any passivation technique. The dark current density is reduced by an order of magnitude at 77 K compared with a conventional mesa etched device.
In the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP the dark current is limited by the diffusion and generation- recombination. The static dark current of the InGaAs/InP PiN photodiode arrays is proportional to the number of the pixels in the array. In PiN InGaAs photodiode array structure, the diffusion currents of the each pixel due to the thermally generated minority carriers...
Deep level transient spectroscopy has been used to characterise p-type In/sub 0.48/Ga/sub 0.52/P grown by gas-source molecular beam epitaxy. Three hole traps were detected in Be-doped material, with thermal emission energies of approximately 0.2-0.3, 0.7-0.8, and 1.0-1.3 eV and trap concentrations less than 4*10/sup 14/, 9*10/sup 14/, and 10/sup 15/ cm/sup -3/, respectively.<<ETX>>
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.