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An Sb-rich (48 at.%) Si–Sb–Te phase-change material with moderate Si content (24 at.%) is proposed for phase-change random access memory (PCRAM) applications. The real time amorphous to crystalline transformation was studied by in situ transmission electron microscopy observations and in situ resistance measurements. The results of time-dependent resistance measurements show that the ...
Shanghai institute of micro-system and information technology (SIMIT) began the research work in PCM technologies from 2003. This report will systematically introduce the recent progress of the PCM group led by Prof. Song. The main contents include: 1) the significance of R&D on PCM, 2) platform construction, 3) research on novel phase change materials like nano composite material (phase change...
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