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We investigate the scattering mechanism in ultrashort double gate In0.53Ga0.47As nMOSFETs by deterministically solving Boltzmann transport equation (BTE). The intra-valley acoustic phonon scattering, optical phonon scattering, intervalley optical scattering, polar optical scattering, and surface roughness (SR) scattering are considered. The impacts of scattering on the performance of device under...
In this paper, the fluctuation of random interface traps (RITs) and its interaction with random dopants of 22-nm junctionless FETs (JL-FET) with high-/metal gate (HKMG) are investigated with 3-D statistical TCAD simulations. The impacts of RIT and random dopant fluctuation (RDF) on the performances of JL-FET are evaluated separately and together. The results show that acceptor-like interface traps...
Lightly doped or even intrinsic channel can be used in SOTB MOSFETs and therefore very Low RDF (random dopant flunctuation) can be expected in such devices. In this work, we systematically investigated the influences of the intrinsic parameter fluctuations, including LER (line-edge-roughness), STV (silicon thickness variation) and WFV (metal-gate work-function variation), on 20nm-gate intrinsic SOTB...
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