The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate a back end of line compatible SiN based material with tunable refractive index enabling low optical loss, high non-linear Kerr response, low index photonic crystals, high efficiency couplers, low loss waveguides and temperature tolerant MUX for DWDM.
We have fabricated ultra-narrow (sub-10 nm) short channel (100 nm) silicon (Si) nanowire transistors with atomically flat interfaces based on Si-on-Insulator (SOI) substrates. The raised source and drain electrodes were patterned together with the gate electrode. The smaller threshold voltage in the narrower nanowire suggests self-limiting oxidation during the gate oxide formation.
Bi-axially strained Germanium (Ge) is an ideal material for Silicon (Si) compatible light sources, offering exciting applications in optical interconnect technology. By employing a novel suspended architecture with an optimum design on the curvature, we applied a biaxial tensile strain as large as 0.85% to the central region of the membrane.
We report on the photoluminescence dynamics of highly n-doped tensile-strained germanium on silicon. The instantaneous decay photoluminescence lifetime changes with intensity, which is explained by the interplay of Shockley-Read Hall and Auger processes.
Monolithic light source is the only missing component to realize all silicon based photonics for high density and low power optical interconnections. In this paper, we will review our attempts to develop light-emitting devices based on silicon quantum wells made by state-of-the-art silicon process.
We have developed all-silicon based light-emitter for optical interconnections. The relatively short florescent lifetime of 4.2 ns in a silicon quantum well makes direct modulations at 10 Mbps accessible for low-end high-volume consumer applications.
The Soft Gamma-ray Detector (SGD) on board ASTRO-H (Japanese next high-energy astrophysics mission) is a Compton telescope with narrow fleld-of-view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor detector system which consists of silicon and CdTe (cadmium telluride) detectors. It can detect photons in a wide energy band...
We have observed net optical gain by current injections to ultra-thin Si embedded in a resonant optical cavity. The cavity consists of a dielectric waveguide fabricated by CMOS and MEMS process. The photoluminescence (PL) spectra show narrow resonances peaked at the designed wavelength, and the electroluminescence (EL) intensity increases super-linearly with currents. The comparisons with first principle...
We confirmed enhanced electroluminescence by lateral carrier injections to quantum confined ultra-thin silicon. The optical intensity can be controlled by the back gate voltage, and the device operates as a light-emitting transistor.
Static and dynamic mechanical properties of the movable floating gate are investigated for a newly proposed highspeed and nonvolatile nanoelectromechanical memory, which features a buckled floating gate incorporating the nanocrystalline silicon quantum dots integrated onto the gate of a MOSFET. By conducting a 3D finite element simulation, we analyze the structural parameter dependence of the switching...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.