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We have characterized low-frequency noise (LFN) such as 1/f noise and random telegraph noise (RTN) in a NAND flash memory cell string for the first time and shown its fundamental properties. The NAND flash memory cells showed specific LFN characteristics under various conditions such as bit-line bias, word-line bias of a selected cell, and pass bias of the unselected cells in the NAND string. Also,...
We have characterized the low frequency noise (LFN) in the NAND flash memory string, for the first time, and shown its fundamental properties. As a result, the NAND flash memory shown specific LFN characteristics in conditions such as bit-line bias, word-line bias, read current and program or erase state of each cell in a string. Also the LFN was investigated with program/erase (P/E) cycling of a...
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