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The objective of this paper is to clarify the primary roles of high-k layer and of interfacial layer on the TDDB lifetime in order to provide a guideline for realizing adequate TDDB reliability and also for the further high-k material selection. HfAlO(N)/SiO(N) and HfON/SiON stacked gate dielectrics has been fabricated with various deposition conditions and thicknesses. Electrical characteristics...
We show that the mobility degradation at low fields is predominantly due to a dipole layer intrinsically formed at the HfO2/SiO2 interface. This dipole layer is also responsible for the anomalousVFB (VTH) shift in high-k MOSFETs. Contribution of remote phonon scattering to the mobility degradation is very little, as revealed by comparing the mobility behaviors for MOSFETs with different crystal symmetry...
We have developed a process for forming an ultra-thin HfSiO x interfacial layer (HfSiO x -IL) for high-k gate stacks. The HfSiO x -IL was grown by the solid-phase reaction between HfO 2 and Si-substrate performed by repeating the sequence of ALD HfO 2 deposition and RTA. The HfSiO x -IL grown by this method enables the formation of very uniform films...
We have experimentally found two different mechanisms characterizing effective work function (Phim,eff) of a gate electrode on Hf-based high-k dielectrics. Interface dipoles induce both positive and negative Phim,eff shifts. The positive shift is almost independent of gate electrode materials, while the negative one is sensitive to Si composition of the gate electrode. Surface densities of the dipoles...
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