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Thin films of Bi4Ge3O12, Bi4Si3O12, PbWO4 and Bi2WO6 scintillators are manufactured and their luminescent properties are studied under X-ray excitation at 295K. X-ray induced luminescence spectra are measured and linear dependence of the luminescence intensity on X-ray irradiation dose rate is observed for the dose region up to 3×10-3A/kg. The radiation stability of the obtained films is investigated...