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In this paper, we present comprehensive results on Al-postmetallization annealing (Al-PMA) effect for the SiO2/GeO2 gate stack on a Ge substrate, which were fabricated by a physical vapor deposition method. The effective oxide thickness of metal-oxide-semiconductor (MOS) capacitor (CAP) was ~7nm, and the Al-PMA was performed at a temperature in the range of 300–400°C. The flat band voltage (VFB),...