The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
InSbN photodiodes prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. Such devices are capable of mid- and long-wavelength infrared photodetection and potential candidates for terahertz radiation.
A novel GalnNAs/AlAs/AlGaAs double-barrier quantum-well-infrared-photo-detector was characterized by photoluminescence, x-ray diffraction, photoluminescence excitation, photocurrent spectra and dark current measurements. The photoluminescence peak at ~1.2 eV and the photocurrent peak at 1.24 mum originate from the interband transition and inter-subband transition, respectively, in the GalnNAs well...
The photoresponse of polycrystalline ZnO films generally contains both a true photoconductivity and a contribution from surface structural changes which can alter the surface conductance via the chemisorption and photodesorption of an active ambient-gas component. The surface structural changes can increase the conductance by up to seven orders of magnitude for a 500 nm thick sample when illuminated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.