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An Al-rich Al2O3 thin film was deposited on a p-type silicon substrate by radio frequency sputtering to form Al/Al-rich Al2O3/p-Si diodes. The current-voltage (I- V) characteristics of the diodes were determined by carrier injection from either the Si substrate or the Al gate and by carrier transport along the tunneling paths formed by Al nanocrystals distributed in the oxide layer. The reverse I-...
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