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Charging Li-ion cells at low temperatures and/or high currents can cause the lithium ions to deposit on the anode surface rather than intercalating into the graphite lattice. This effect, named lithium plating, may severely affect the performance, reliability and safety of the cell. Because metallic lithium at the anode consumes more space than intercalated into the graphite, the cell volume increases...
In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry/wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). In the terms of mesa SiGe HBT production, it is a key technology to control the etch of ultra-thin Si and SiGe film. When N+/N silicon in emitter region is etched, the length of etch time is critical. If etch...
In the last few years Si/SiGe/Si heterostructures grown by molecular beam epitaxy (MBE) with its high precision and reproducibility have been used to build high-frequency and low-noise heterojunction bipolar transistors (HBTs). The latest optimization of layer design led to a SiGe HBT with an f max value of 160 GHz. As a circuit demonstrator a DC-18 GHz low power wideband amplifier...
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