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We report on the effect of molecular structure and substrate material on amorphous carbon nitride (a-CN:H) electrode properties including film adhesion to the substrate and electrochemical properties. Films were prepared by neutral beam enhanced chemical vapor deposition on different substrate materials (p-type Si, Cu, Ti, and Pt) below room temperature. When depositing on Si, doping nitrogen into...
Different nitrogen sources, pure N2, pure NO, and NO mixed with O2 (25% NO + 75% O2), are used to confirm the effects of N+, N2+, and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of N2, NO, and NO mixed with O2, the major implanted ions are, respectively, N2+ ions, N2+ mixed with NO+...
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