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This work evaluates a novel bitumen modification through the use of expanded vermiculite (EVMt) which has been traditionally used as thermal insulation material. In order to improve the compatibility between EVMt and bitumen, EVMt was modified by octadecyl dimethyl benzyl ammonium chloride and marked as organo-expanded vermiculite (OEVMt). A new approach to determine the microstructures of OEVMt modified...
AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 ??m?? 5 ??m. A mobility as high as 1950 cm2/Vs with...
Unintentionally doped AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with compositionally step-graded AlGaN barrier layer were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The HEMT structure exhibited typical two-dimensional electron gas (2DEG) mobility of 1600cm2/Vs at room temperature and 6412cm2/Vs at 79K with almost equal 2DEG concentration...
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