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Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.
A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 ??m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5 V 10 mA. The silicon dioxide waveguide is composed of multiple layers...
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