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Three independent methods show clear evidence that pentacene layers grown on parylene C layer had better molecular microstructure compared to films grown on SiO2 surface. The electrical measurements confirmed these results and carrier mobility of 0.15 cm2 /Vs was obtained in OFET devices.
We present diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy, microphotoluminescence and SIMS methods. Bevelled form of the samples was used for the study. The thickness of the epitaxial LT GaAs layer with presence of high density of antisites AsGaAsand As excess was determined. Between InP substrate and LT GaAs layer an inter facial layer composed from InAs, InO and C was detected...
As a non-destructive and relatively rapid method, Raman spectroscopy is well established for the characterization of semiconductor substrates, heterostructures and devices. Some applications of micro-Raman spectroscopy to measurements of stress, crystallinity and charge carriers in semiconductor structures are discussed with emphasis on the scope and the limitations of the information that can be...
We report our investigations of the nickel silicide based contact layers prepared for silicon power diodes by electroless nickel plating followed by furnace annealing and subsequent electroless deposition of contact layers. Selected properties of the final structure were studied by the SEM/EDS, micro-Raman spectroscopy and TOP SIMS. The distribution of the species in contacts, quality of interfaces...
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