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Silacyclobutane and silacyclopentane were synthesized for evaluations as precursors for silicon dioxide films under lowpressure chemical vapor deposition conditions at low temperatures. Both silacyclobutane and silacyclopentane were studied in the temperature range from 300°C to 500°C in the presence of oxygen. Deposition rates follow an Arrhenius behavior at constant reactor pressure, and the activation...
Techniques for improved copper chemical vapour deposition (CVD) processing by the addition of trimethylvinylsilane (tmvs) and hexafluoroacetylacetone (Hhfac) during copper deposition from the volatile liquid precursor Cu(hfac)(tmvs) are described. The tmvs enables stable high vaporization rates of precursor by direct liquid injection and the Hhfac permits higher deposition rates of smoother copper...
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