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We report on the ability to grow InAs quantum dots (QDs) by droplet epitaxy (DE) using solid-source molecular beam epitaxy (MBE). In particular, the control of the size and density of InAs QDs at near room temperatures are achieved as a function of substrate temperature and crystallization condition. For a typical range of QD density ( ~109 to 1010 cm-2), the growth window is revealed to be fairly...
This paper reports on new concept consisting of all-oxide-based device component for future high density non-volatile data storage with stackable structure. We demonstrate a GaInZnO (GIZO) thin film transistors (TFTs) integrated with 1D (CuO/InZnO)-1R (NiO) (one diode-one resistor) structure oxide memory node element. RRAM (Resistance Random Access Memory) has provided advantages in fabrication which...
Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot laser at 1.44 /spl mu/m with I/sub th/ of 62.5 mA was achieved with a ridge waveguide laser with 2 /spl mu/m ridge width and a cavity length of 400 /spl mu/m.
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