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Tin-doped indium oxide films deposited by d.c. magnetron sputtering were characterized by electrical resistivity, optical transmission, X-ray diffraction (XRD), transmission electron microscopy and stress measurements. Deposition was performed at low temperature and 520 K in different oxygen ambients. The influence of post-deposition annealing was investigated. Special attention was paid to the homogeneity...
The etching behaviour of sputter-deposited tin-doped indium oxide (ITO) films in 8 M HCl solutions was investigated. The etch rate was mainly dependent on the microcrystallinity of the films. Amorphous ITO dissolved with an extremely high rate, while the etch rate of polycrystalline ITO was in a technologically interesting range. Amorphous ITO which was crystallized after annealing was stress free...
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