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AlOx-based resistive switching device (RRAM) with multi-level storage capability was investigated for the potential to serve as an electronic synapse device. The Ti/AlOx/TiN memory stack with memory size 0.48um×0.48um was fabricated; the resistive layer AlOx was deposited using atomic-layer- deposition (ALD) method. Multi-level resistance states were obtained by varying the compliance current levels...
The evidence of degraded RHIGH or permanent damage of the device induced by the current overshoot in the forming/SET step is demonstrated and a possible scenario for this result is revealed. Dependence of the overshooting current on the cathodic electrode and device configuration are discussed. Reduction of the overshooting current by a transistor can enhance the memory performances. The devices with...
The effect of operation current on the high-resistance state and the endurance for the -based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high-resistance state of the 1R device after the forming and SET stages is observed. The accelerated degradation of the high-resistance state for the ...
A circuit topology which can prevent the series resonant power supply in a Tesla transformer from damage induced by the reversal voltage on the storage capacitor is presented. The circuit is based on current-limiting resistor and auxiliary capacitor which can restrict the over current in the rectifier of series resonant power supply. Moreover, adoption of the auxiliary capacitor can raise the average...
The design and construction of a repetitive high-current pulsed accelerator-TPG700 is described in this paper. The accelerator consists of a Tesla transformer with 40 ohm build-in coaxial pulse forming line. The triggered high-pressure switch of TPG700 has the capability of conducting current of 17.5kA in 35ns' duration at 100 pps. The transformer was designed to operate at 1.4MV, when its primary...
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