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We succeeded in fabricating low temperature single grain thin film transistor (LTSG-TFT) devices with excellent characteristics by using the CMP-flattened mu-Czochralski process for 3D integrated circuits application. The LTSG-TFT devices demonstrated high drivability comparable to that of SOI-MOSFETs and an excellent gate delay time of 65psec was obtained despite the use of fully low temperature...
A reliable tantalum (Ta) gate device technology, which can drastically reduce the number of process steps, has been developed. Ta gate Fully-Depleted-Silicon-On-Insulator (FDSOI) MOSFETs with 0.15 /spl mu/m gate length by low-temperature processing below 500/spl deg/C after the gate oxide formation have good on/off characteristics. Comprehensive design guidelines for Ta gate MOSFETs in the deep-submicron...
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