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Silicon steels are widely applied in the magnetic cores design, such as power transformer, electrical machine, and magnet. Magnetic properties of the silicon steel are key factors in design and performance optimization of the electrical apparatus. In the past several decades, one and two dimensional (2-D) magnetic properties testing methods have been developed for single sheet silicon steel specimen...
TEM dark-field off-axis electron holography technique was applied to study strain profile in bulk Si pMOSFETs with epitaxial SiGe selectively grown in source/drain are. Based on lattice displacement-induced electron wave phase shift, 2-D strain mapping (ε[110] and ε[001]) were retrieved. Strain variation due to sample thinning was evaluated. Results from dark-field holography technique was discussed...
This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited...
This work explores a new technique for 3D aspherical Si microlens fabrication using a shadow mask. With the shadow mask, a convex aspherical SiO2 layer is sputter deposited on a Si wafer due to the anisotropy of deposition. The shape of the SiO2 is transferred to Si by DRIE to form the aspherical microlens. Microlenses with controllable apertures (0.4mm – 2mm in diameter) and focal lengths (1mm –...
With continuous scaling in transistor size, there is demand to develop advanced FIB techniques for TEM failure analysis. Two techniques are reported here: 1) consecutive planar-cross section sample preparation for dual-direction TEM analysis and, 2) enhanced coating method for photo resists profile evaluation. Both the techniques have been successfully applied on deep sub-micron device issues which...
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First-principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self-interstitial is shown to help explain the enormous...
A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity...
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