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This paper presents the origin of gallium (Ga) incorporation into AlN layers grown by metalorganic vapor phase epitaxy (MOVPE). We systematically investigated Ga incorporation from GaN deposits on the inner walls of a growth reactor and an underlying GaN layer. The Ga incorporation is not affected by the GaN deposits on the inner walls of the reactor, but is strongly affected by the underlying GaN...
A high current density over 1000 A/cm2 operation in a small chip size m-plane GaN-LED has been successfully demonstrated. The m-plane GaN-LED with a chip size 450 × 450 μm2 has emitted 1353 mW in a light output power and 39.2% in an external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by...
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