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The dopant and thermal interaction on solid phase epitaxy (SPE) formed SiC has been investigated. We have studied the impact on substitutional carbon concentration ([C]sub) from various thermal steps including low temperature anneal, SiGe epitaxy thermal budget, RTP, and laser anneal (LSA). Regarding the integration scheme for implementing embedded SiC (eSiC) S/D on NMOS performance enhancement, both...
In this paper, we have systematically investigated the factors for performance enhancement on sub-32nm CMOS technology. We report that PMOS gains the drive current by slim spacer, S/D silicide resistance reduction by e-SiGe, and compressive CESL. The three factors improve the PMOS performance by 7%, 10% and 25% respectively. Combined with the three factors can gain the device drive current 30%. In...
In this paper, the device performance in terms of its transport characteristics and reliability of the MOS devices on the SOI and strained-SOI have been examined. For the first time, both the transport and reliability characteristics have been established from experimental SOI and SSOI nMOSFETs. It was characterized by two parameters, the ballistic efficiency and the injection velocity. Experimental...
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