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A Q-band 6W MMIC power amplifier was developed, which employed 3-way power combination circuit to combine 12 FET cells for high output power. In addition, the pi type bias and matching circuit was applied to the inter-stage matching circuit to suppress loop oscillation. 37.9dBm (6.2W) saturated output power was successfully achieved, which is the highest output power for Q-band power amplifiers reported...
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave amplifiers, is presented. According to the nonlinear drain resistance model previously proposed, we have adopted a "Stepped Recess" structure, which includes a GaAs buried layer 150 nm thick to reduce the nonlinear drain resistance and a recessed area at the gate side to...
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