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A new charge pump circuit with a clock that shows an increased clock voltage as its stage is increased is proposed in the paper. The charge pump circuit utilizes the cross-connected NMOS, voltage doubler, as a pumping stage. Each stage of the voltage-doubler provides a pair of complementary clock voltages. The clock voltage also increases as the stage of voltage doubler is increased. It shows that...
A high efficiency charge pump circuit which is realized by multi-staged high-voltage clock (HVC) generator is presented. The ten-staged HVC charge pump circuit could pump the voltage up to 21.35 V at a supply voltage of 2 V in 0.35 mum CMOS process. It also shows that the clock voltage increased linearly as the stages of the high-voltage clock generator was increased. No saturation tendency of the...
A high efficiency new charge pump circuit was proposed in the paper. A clock scheme which designed by multi-staged voltage doubler was used in the Dickson charge pump structure. Very high voltage could be reached through the pumping of the new charge pump circuit. By the simulation of HSpice under 0.35 mum process, 2 V supply voltage and clock voltage. It showed a voltage up to 40.37 V was obtained...
Ohmic contact scheme, Au/Si/Ni/n-InP, was studied in the research. A lowest specific contact resistance of 1.98times10-6 omega-cm2 was obtained after rapid thermal annealing (RTA) at 450degC for 30 sec. Two new phases, In3Ni2(012), Au3In2(114) were observed by X-ray diffraction analysis (XRD) after the ohmicity was reached. Both in-diffusion of the elements Au, Si and Ni and out-diffusion of In were...
A double metals structure, Pt/Al/n-InP diode was studied. An Al 2O3 thin film was formed at the contact interface of the Pt/Al/InP diode after thermal annealing. It was detected at the diffraction angle of 2thetas-20.4deg by X-ray diffraction (XRD) analysis after the diode was annealed at 300degC or 400degC for 10 min. Also, from secondary ion mass spectrum (SIMS) analysis, it was found that the Al...
PtSi based ohmic contact on InP substrate was discussed in the research. The inter-diffusion between the elements of the contacts after various annealing temperature were analyzed by Rutherford backscattering analysis (RBS). A better specific contact resistance was obtained at the Au/Si/Pt/InP contact scheme. The ohmicity was due to the silicon doping effect to InP substrate. The existence of Au on...
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