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This paper presents a 10–40 GHz wideband frequency quadrupler in GF8HP 0.13 µm SiGe BiCMOS process. Three bands (low-, mid-, and high-band) are implemented on-chip for wideband operation. An on-chip 4-pole switchable elliptic bandpass filter is also used to result in greatly improved harmonic rejection ratio (HRR). The measured worstcase HRR is 32–48 dBc at 11–40 GHz with an output power of +1 to...
A fully integrated 2-channel Ka-band True Time Delay (TTD) phase shifter with 12ps continuous changing delay time has been realized in a 0.25μm SiGe:C BiCMOS technology. A delay variation cancellation technique is proposed, resulting in less than 0.8ps delay variation over a 20–40GHz frequency span, meanwhile maintaining a constant input impedance. In the high (low) power mode, the measured input...
A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8–2.2 dB has been measured at 26–32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is −11dBm and input IP3 is −1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including...
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