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Three-dimensional multi-channel field-effect transistor (MCFET) gate stack and series resistance are investigated and optimized by specifically developed integration processes, characterization methods, and numerical simulations. First, the impact of a TiN/HfO2 gate stack on embedded-gate MCFET structure performance is studied. Both TiN/SiO2 and N+poly-Si/SiO2 gate stacks were introduced in the MCFET...
A systematic study of mobility performances and BTI reliability was done in advanced dielectrics stacks. By reducing the oxide films thicknesses THKles2.5 nm, PBTI becomes generally very low and associated lifetimes are always over 10 years. By studying a large variety of dielectric stacks we also clearly demonstrate that mobility performances, interface defects Nit and NBTI reliability are strongly...
For the first time, we integrated and compared the electrical performances of high-K / metal embedded gate in 3D multi-channel CMOSFETs (MCFETs) on SOI. The electrical characteristics of embedded gates obtained by filling cavities with TiN/HfO2, TiN/SiO2 or N+ poly-Si/SiO2 were compared to a planar reference. In particular we investigated electron and hole mobility behaviours (300 K down to 20 K)...
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