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This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET. The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces. The model calculation is compared with...
A continuous surface potential versus voltage equation is presented and its solution is discussed for long channel undoped (lightly doped) surrounding-gate (SRG) MOSFETs from accumulation to strong inversion region. The equation is derived from the exact solution of a simplified Poisson's equation and then amended from the mathematic condition of continuity, which allows the surface potential and...
In this paper a complete surface potential-based core model for the undoped symmetric double-gate MOSFETs is derived from a fully self-consistent coupling between the surface potential versus voltage equation from Poisson equation solution and the drain current expression from Pao-Sah's double integral. The model consists of a single set of the surface potential equation and the analytic drain current...
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