The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on the operation of electrically pumped 1.3µm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.
The first quantum dot laser under simultaneous three-state lasing operation at room temperature has been realised. The device exhibits ground state lasing at 1306 nm, the fist excited state lasing at 1213 nm and the second excited state lasing at 1152 nm synchronously. This is attributed to the long carrier relaxation time from higher energy levels to lower energy levels.
A bandgap and intersublevel spacing tuned laser and a broadband quantum dot superluminescent diodes have been realized by using a modulation p-doped InGaAs/GaAs quantum dot structure, which utilises a post-growth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground-state...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.