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This work presents a new experimental setup to perform highly accelerated Time Dependent Dielectric Breakdown (TDDB) in constant voltage stress (CVS) mode with capability of collecting failure distributions in sub millisecond regime. The new apparatus is capable of collecting failure times down to tens of microseconds and we demonstrate that power law dependence with respect to gate voltage down to...
We compare the intrinsic reliability of the dielectric stack of a high performance bulk planar 20nm replacement gate technology to the reliability of high performance bulk planar 28 nm gate first high-k metal gate (HKMG) technology, developed within the IBM Alliance. Comparable N/PFET TDDB and comparable/improved NFET PBTI are shown to be achievable for similar Tinv. The choice to not include channel...
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