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Reactive ion etching (RIE) is a basic tool in the processing of InP optoelectronic and photonic integrated circuits (OEICs and PICs). However, due to the bombardment of the high energy ions of the plasma, heavy damage of the semiconductor surface occurs. Additionally, when using a CH 4 + Ar + H 2 plasma significant proton implantation also takes place. Investigating n-type InP etched...