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We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good trade-off between breakdown voltage and specific on-resistance for the first time. Device with 4 mum channel length and 16 mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmega-cm2 (VG-VT=20 V).
We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific...
Efficient power conversion at high switching frequencies requires switching transistors with a low gate charge to limit the switching losses in addition to low specific ON resistance. We report two integrable GaAs switching pHEMTs, 14 V enhancement mode and 7 V depletion mode transistors that show much superior switching figure of merit (Ron times QG) than that of state-of-the-art silicon MOSFETs...
We have studied and optimized the breakdown voltage of enhancement-mode n-channel GaN hybrid MOS-HEMTs on sapphire substrate. These MOS-gated transistors, with different Mg doped p-type GaN layer underneath the unintentional doped AlGaN/GaN layer, have breakdown voltage as high as 1300 V using a dielectric isolation (DI) RESURF approach.
This paper presents a high power efficiency DC-DC buck converter in Gallium Arsenide technology targeting integrated power amplifier modules. The buck converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of coupling on the steady state and transient response of the converter is given. The coupling factor is selected to achieve a maximum power efficiency...
Silicon carbide (SiC), with its high critical electric field property and the capability of operation at high temperature, has attracted much attention and shown to be a promising semiconductor material for high power devices. Some of the most widely used devices in power circuits are the JFETs and the MOSFETs. Based on characterization of high voltage 4H-SiC JFET and MOSFET, this work compares the...
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