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High-voltage (4-6 kV) 4H-SiC-based bipolar junction transistors were designed, fabricated, and characterized. Various design and process optimization techniques to improve the on state and the forward blocking performance of these devices were studied and incorporated. Using the conventional base contact implantation process, devices with blocking voltages up to 4 kV and specific on-resistance (R...
We propose and experimentally demonstrate a novel 1.5kV JBS rectifier structure called LC-JBS rectifier that offers a lower reverse leakage current and faster switching speed. Test devices were fabricated using an epi regrowth technology over implanted p+ buried layer. We have obtained performance trade-offs between forward drop (<1.8V) with reverse leakage characteristics approaching that of PiN...
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