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We report on the demonstration of AlGaN nanowire lasers in the ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.
We demonstrate coherent emission of electrically-injected rolled up InGaAs/InGaAsP microtubes. Sequence of optical modes with an energy separation of about 24 meV has been observed.
We present results on InGaAsP rolled-up microtube resonators with embedded InAs quantum dots with strong coherent emission at ∼ 1.55 μm. We also show coupling of these resonators to Silicon-on-Insulator waveguides.
We present an optically pumped InGaAsP microtube laser operating in the 1.64 μm wavelength range with InAs quantum dots as the gain medium. We observe room temperature continuous wave operation and a 4 μW threshold.
This work achieved, for the first time, lasing in rolled-up semiconductor tubes at room temperature. The devices are characterized an ultralow threshold power (~ 4 ??W), an intrinsic lasing linewidth of ~ 0.2 0.3 nm, and a linear polarization with the electric field parallel to the tube surface.
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