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A series of AlxGa1-xN/AlN/Sapphire films with x=0.35–0.75 and different thickness of epi-layer were prepared by metalorganic chemical vapor deposition (MOCVD). Spectroscopic ellipsometry (SE) was used to study the temperature-dependent refractive indices and optical bandgaps of the AlxGa1-xN films ranging from 300 to 823K. Parametric semiconductor (PSEMI) models were used to describe the dielectric...