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We experimentally demonstrate 200x spontaneous emission rate enhancement from an electrically-injected nanoLED coupled to a cavity-backed optical slot antenna. Such a nanoLED device could be used as a fast, efficient, and nanoscale light source for on-chip optical interconnects.
We propose enhancing the rate of spontaneous emission from an electrically injected nanoLED with a cavity backed optical slot antenna. Initial experimental results show 2x higher intensity of light emission with polarization parallel with the antenna mode indicating the presence of spontaneous emission enhancement.
A circuit model of a single-element linear optical antenna is presented. It agrees well with FDTD simulations and predicts spreading resistance will ultimately limit the maximum rate enhancement an efficient antenna can achieve to ∼10,000.
Arch-dipole optical antennas with uniform 5nm gaps have been fabricated on Si substrate using deep-UV “spacer” lithography. Strong surface-enhanced Raman scattering (SERS) signals with an enhancement factor of 1.1×108 have been measured.
An optical antenna based nanoLED design that enhances photoluminescence of a semiconductor emitter by more than 10x is presented. The small mode (0.015 (λ0/2n)3) and physical (3×10−4 λ03) volumes are attractive for on-chip optical interconnect applications.
Guidelines for designing an optical antenna for optimizing the performance of a nanophotodiode are proposed. A nanopatch design is simulated with over 70% absorption efficiency using germanium as the absorber.
Optical dipole antennas with varying length and width are fabricated using e-beam lithography. Antennas with wider width are shown to exhibit stronger scattering while preserving the same resonance frequency.
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