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This work reviews a process that was developed to enhance the interface state density of a Ge/High-k interface. A slot plane antenna plasma oxidation (SPAO) process was implemented during dielectric deposition steps to fabricate TiN/ZrO2/Al2O3/p-Ge MOS gate stacks. A poor interface was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition because of fragmented GeOX interfacial...
This work has demonstrated a high quality HfO2 based gate stack by depositing HfAlOx along with HfO2 in a layered structure. In order to get multifold enhancement of the gate stack quality both Al percentage and distribution were observed by varying the HfAlOx layer thickness and it was found that < 2% Al/(Al+Hf)% incorporation can result in up to 18% reduction in average EOT along with up to 41%...
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