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CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
It has been proposed that the underlying epileptic process is mediated by changes in both excitatory and inhibitory circuits leading to the formation of hyper-excitable seizure networks. In this review we aim to shed light on the many physiological factors that modulate excitability within these networks. These factors have been discussed extensively in many reviews each as a separate entity and cannot...
With the increased use of Lead-free alloys in BGA packages and assemblies, new reliability issues have become critical. A common mode of failure during impact conditions for BGA assemblies is brittle failure at the interface between the BGA substrate pad and the bulk solder joint. However, the strength characteristics of these interfaces, which include an intermetallic compound (IMC) layer, are not...
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