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We investigate different growth techniques of InSb quantum dots in a GaSb matrix for applications in laser devices operating in the mid-infrared region. We show that conventional molecular beam epitaxy growth does not provide an active medium suitable for device applications, due to the very long migration length of In-adatoms on Sb-terminated surfaces. For this reason, we developed an innovative...
Demonstrated is laser emission between 2.5 and 3.5 μm from broad-area laser diodes with active zones made of InAs/GaSb short-period superlattices confined by AlGaAsSb guiding and cladding layers. A record threshold-current density of 20 A/cm2 is achieved at 95 K and 2.6 μm. Lasing below 3 mm is achieved up to room temperature, while it is limited at 160 K for longer wavelength owing to low carrier...
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